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arXiv · 1302.0173

Basic aspects of high-power semiconductor laser simulation

Hans Wenzel
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Abstract

The aim of this paper is to review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions. We discuss some of the peculiarities in the description of the optical field of wide-aperture lasers. As an example, the role of the substrate as a competing waveguide in GaAs-based lasers is studied. The governing equations for the investigation of modal instabilities and filamentation effects are presented and the impact of the thermal-lensing effect on the spatiotemporal behavior of the optical field is demonstrated. We reveal the factors that limit the output power at very high injecton currents based on a numerical solution of the thermodynamic based drift-diffusion equations and elucidate the role of longitudinal spatial holeburning.

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Hans Wenzel. 2013-02-01. Basic aspects of high-power semiconductor laser simulation. https://doi.org/10.1109/jstqe.2013.2246774

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