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arXiv · 1302.5360

Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

S. Roy·A. M. Kamerbeek·K. G. Rana·S. Parui·T. Banerjee
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Abstract

SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport, that originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.

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S. Roy, A. M. Kamerbeek, K. G. Rana, S. Parui, T. Banerjee. 2013-02-21. Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3. https://doi.org/10.1063/1.4807017

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