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arXiv · 1303.0258

Rapid diffusion of electrons in GaMnAs

C. P. Weber·Eric A. Kittlaus·Kassandra B. Mattia·Christopher J. Waight·J. Hagmann·X. Liu·M. Dobrowolska·J. K. Furdyna
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Abstract

We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a conduction-band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs.

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C. P. Weber, Eric A. Kittlaus, Kassandra B. Mattia, Christopher J. Waight, J. Hagmann, X. Liu, M. Dobrowolska, J. K. Furdyna. 2013-03-01. Rapid diffusion of electrons in GaMnAs. https://doi.org/10.1063/1.4804578

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