Metal-insulator transition in three-dimensional semiconductors

K. Ziegler

doi:10.3390/sym11111345

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arXiv · 1303.2359

Metal-insulator transition in three-dimensional semiconductors

K. Ziegler

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Abstract

We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry breaking results in metallic behavior, whereas the insulating regime is characterized by the absence of spontaneous symmetry breaking. The transition is continuous for the average conductivity with critical exponent equal to 1. Away from the critical point the exponent is roughly 0.6, which may explain experimental observations of a crossover of the exponent from 1 to 0.5 by going away from the critical point.

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K. Ziegler. 2013-03-10. Metal-insulator transition in three-dimensional semiconductors. https://doi.org/10.3390/sym11111345

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