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arXiv · 1303.3326

Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices

Nina Eikenberg·Kumar Ganesan·Kin Kiong Lee·Mark T. Edmonds·Laurens H. Willems van Beveren·Steven Prawer
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Abstract

Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.

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Nina Eikenberg, Kumar Ganesan, Kin Kiong Lee, Mark T. Edmonds, Laurens H. Willems van Beveren, Steven Prawer. 2013-03-14. Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices. https://doi.org/10.1109/commad.2012.6472415

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