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arXiv · 1304.0064

Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots

K. Takeda·T. Obata·Y. Fukuoka·W. M. Akhtar·J. Kamioka·T. Kodera·S. Oda·S. Tarucha
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Abstract

We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero.

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K. Takeda, T. Obata, Y. Fukuoka, W. M. Akhtar, J. Kamioka, T. Kodera, S. Oda, S. Tarucha. 2013-03-30. Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots. https://doi.org/10.1063/1.4799287

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