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arXiv · 1304.0572

Persistent enhancement of the carrier density in electron irradiated InAs nanowires

Corentin Durand·Maxime Berthe·Younes Makoudi·Jean-Philippe Nys·Renaud Leturcq·Philippe Caroff·Bruno Grandidier
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Abstract

We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field-effect based measurements and numerical simulations of the electron density, the change of the conductivity is found to be caused by the increase of the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the nanowire electrical properties are predominantly affected by radiation-induced defects occuring at the nanowire surface and not in the bulk.

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Corentin Durand, Maxime Berthe, Younes Makoudi, Jean-Philippe Nys, Renaud Leturcq, Philippe Caroff, Bruno Grandidier. 2013-04-02. Persistent enhancement of the carrier density in electron irradiated InAs nanowires. https://doi.org/10.1088/0957-4484%2F24%2F27%2F275706

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