Phonon decay in silicon nanocrystals

A. A. Prokofiev; A. N. Poddubny; I. N. Yassievich

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arXiv · 1304.1623

Phonon decay in silicon nanocrystals

A. A. Prokofiev·A. N. Poddubny·I. N. Yassievich

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Abstract

The decay of the optical phonon into the two phonons of smaller energy is calculated for Si nanocrystals. The rate of the process is in the range of 1 to 10 ps. Such anharmonic phonon decay may control the energy relaxation rate of excited carriers in Si/SiO$_2$ nanocrystals. Relevance of the phonon decay to the experimentally observed hot carrier photoluminescence is discussed.

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A. A. Prokofiev, A. N. Poddubny, I. N. Yassievich. 2013-04-05. Phonon decay in silicon nanocrystals. https://arxiv.org/abs/1304.1623

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