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arXiv · 1304.1792

Properties of Two-Dimensional Silicon grown on Graphene Substrate

Ruiping Zhou·Lok C. Lew Yan Voon·Yan Zhuang
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Abstract

The structure and electrical properties of a two-dimensional (2D) sheet of silicon on a graphene substrate are studied using first-principles calculations. A new corrugated rectangular structure of silicon is proposed to be the most energetically favorable structure. The shifting of the Fermi energy level indicates self-doping. Calculation of electron density shows a weak coupling between the silicon layer and graphene substrate. The 2D silicon sheet turns to be metallic and has a much higher value of transmission efficiency (TE) than the underlying graphene substrate.

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Ruiping Zhou, Lok C. Lew Yan Voon, Yan Zhuang. 2013-04-05. Properties of Two-Dimensional Silicon grown on Graphene Substrate. https://doi.org/10.1063/1.4820473

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