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arXiv · 1304.2871

Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot

R. Li·F. E. Hudson·A. S. Dzurak·A. R. Hamilton
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Abstract

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and reservoirs. Clear Coulomb blockade oscillations are observed, and source-drain biasing measurements show that it is possible to deplete the dot down to the few hole regime, with excited states clearly visible. The architecture is sufficiently versatile that a second hole dot could be induced adjacent to the first one.

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R. Li, F. E. Hudson, A. S. Dzurak, A. R. Hamilton. 2013-04-10. Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot. https://doi.org/10.1063/1.4826183

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