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arXiv · 1304.4078

Non-filamentary memristive switching in Pt/CuOx/Si/Pt systems

L. L. Wei·D. S. Shang·J. R. Sun·S. B. Lee·Z. G. Sun·B. G. Shen
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Abstract

We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual electroforming marked by resistance increasing and capacitance decreasing is observed in current-voltage and capacitance characteristics. By the Auger electron spectroscopy analysis, a model based on Cu ion and oxygen vacancy drift, and thickness change of the SiOx layer at the CuOx/Si interface was proposed for the memristive switching and gradual electroforming, respectively. The present work would be meaningful for the preparation of forming-free and homogeneous memristive devices.

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L. L. Wei, D. S. Shang, J. R. Sun, S. B. Lee, Z. G. Sun, B. G. Shen. 2013-04-15. Non-filamentary memristive switching in Pt/CuOx/Si/Pt systems. https://doi.org/10.1088/0957-4484%2F24%2F32%2F325202

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