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arXiv · 1304.6992

Spin blocker made of semiconductor double quantum well using the Rashba effect

S. Souma·H. Mukai·M. Ogawa·A. Sawada·S. Yokota·Y. Sekine·M. Eto·T. Koga
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Abstract

We propose a lateral spin-blockade device that uses an InGaAs/InAlAs double quantum well (DQW), where the values of the Rashba spin-orbit parameter $\alpha_{\rm R}$ are opposite in sign but equal in magnitude between the constituent quantum wells (QW). By tuning the channel length of DQW and the magnitude of the externally applied in-plane magnetic field, one can block the transmission of one spin (e.g., spin-down) component, leading to a spin-polarized current. Such a spin-blocking effect, brought about by wave vector matching of the spin-split Fermi surfaces between the two QWs, paves the way for a new scheme of spin-polarized electric current generation for future spintronics applications based on semiconductor band engineering.

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S. Souma, H. Mukai, M. Ogawa, A. Sawada, S. Yokota, Y. Sekine, M. Eto, T. Koga. 2013-04-25. Spin blocker made of semiconductor double quantum well using the Rashba effect. https://arxiv.org/abs/1304.6992

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