Theoretical Model of Superconducting Spintronic SIsFS Devices

S. V. Bakurskiy; N. V. Klenov; I. I. Soloviev; V. V. Bol'ginov; V. V. Ryazanov; I. V. Vernik; O. A. Mukhanov; M. Yu. Kupriyanov; A. A. Golubov

doi:10.1063/1.4805032

arXiv · 1305.0836

Theoretical Model of Superconducting Spintronic SIsFS Devices

S. V. Bakurskiy·N. V. Klenov·I. I. Soloviev·V. V. Bol'ginov·V. V. Ryazanov·I. V. Vernik·O. A. Mukhanov·M. Yu. Kupriyanov·A. A. Golubov

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Abstract

Motivated by recent progress in development of cryogenic memory compatible with single flux quantum (SFQ) circuits we have performed a theoretical study of magnetic SIsFS Josephson junctions, where 'S' is a bulk superconductor, 's' is a thin superconducting film, 'F' is a metallic ferromagnet and 'I' is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current $I_{C}$ and a normal-state resistance $R_{N}$ in the $\pi$ state, comparable to that in SIS tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlO${_x}$-Nb-Pd$_{0.99}$Fe$_{0.01}$-Nb junctions.

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S. V. Bakurskiy, N. V. Klenov, I. I. Soloviev, V. V. Bol'ginov, V. V. Ryazanov, I. V. Vernik, O. A. Mukhanov, M. Yu. Kupriyanov, A. A. Golubov. 2013-05-03. Theoretical Model of Superconducting Spintronic SIsFS Devices. https://doi.org/10.1063/1.4805032

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