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arXiv · 1305.3428

Photoluminescence in Ga/Bi co-doped silica glass

Igor Razdobreev·Hicham El Hamzaoui·Vladimir B. Arion·Mohamed Bouazaoui
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Abstract

Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active center (BAC) was identified as the analogue of Al-connected BAC. Visible and infrared photoluminescence (PL) were investigated in a wide temperature range of 1.46-300 K. Based on the results of the continuous wave (CW) and time resolved spectroscopy we identify the centers emitting in the spectral region of 480-820 nm as Bi$^+$ ions. The near infrared (NIR) PL around 1100 nm consists of two bands. While the first one can be ascribed to the transition in Bi$^+$ ion, the second band is presumably associated to defects. We put in evidence the energy transfer between Bi$^+$ ions and the second NIR emitting center via quadrupole-quadrupole and dipole-quadrupole mechanisms of interactions. Finally, we propose the energy level diagram of Bi$^+$ ion interacting with this defect.

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Igor Razdobreev, Hicham El Hamzaoui, Vladimir B. Arion, Mohamed Bouazaoui. 2013-05-15. Photoluminescence in Ga/Bi co-doped silica glass. https://doi.org/10.1364/oe.22.005659

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