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arXiv · 1306.4351

Transistor operation and mobility enhancement in top-gated LaAlO_3 / SrTiO_3 heterostructures

M. Hosoda·Y. Hikita·H. Y. Hwang·C. Bell
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Abstract

We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gated junction field-effect transistors using a range of LaAlO_3 thicknesses as the top gate insulator. Gated Hall bars show near ideal transistor characteristics at room temperature with on-off ratios greater than 1000. Lower temperature measurements demonstrate a systematic increase in the Hall mobility as the sheet carrier density in the channel is depleted via the top gate, providing a route to higher mobility, lower density electron gases in this system.

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M. Hosoda, Y. Hikita, H. Y. Hwang, C. Bell. 2013-06-18. Transistor operation and mobility enhancement in top-gated LaAlO_3 / SrTiO_3 heterostructures. https://doi.org/10.1063/1.4820449

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