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arXiv · 1306.4394

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

A. R. Ullah·H. J. Joyce·A. M. Burke·H. H. Tan·C. Jagadish·A. P. Micolich
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Abstract

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.

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A. R. Ullah, H. J. Joyce, A. M. Burke, H. H. Tan, C. Jagadish, A. P. Micolich. 2013-06-18. Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors. https://doi.org/10.1002/pssr.201308014

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