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arXiv · 1307.2368

Electrical anisotropy of heteroepitaxial InSb/GaAs layers

T. A. Komissarova·A. N. Semenov·D. A. Kirilenko·B. Ya. Meltser·V. A. Solovyev·A. A. Sitnikova·P. Paturi·S. V. Ivanov
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Abstract

We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has been found, whereas the electrical transport through the InSb bulk layer studied by Shubnikov-de Haas oscillations is shown to be independent of the crystallographic directions. The low-field electrical anisotropy of the InSb films appears to be governed by two competitive anisotropic effects: influence of spontaneously formed In nanoclusters inhomogeneously distributed within the InSb layers and conductivity through the near-interface layer with high anisotropic density of extended defects.

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T. A. Komissarova, A. N. Semenov, D. A. Kirilenko, B. Ya. Meltser, V. A. Solovyev, A. A. Sitnikova, P. Paturi, S. V. Ivanov. 2013-07-09. Electrical anisotropy of heteroepitaxial InSb/GaAs layers. https://arxiv.org/abs/1307.2368

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