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arXiv · 1307.2955

In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system

Tasuku Chiba·Ryuichi Masutomi·Kentarou Sawano·Yasuhiro Shiraki·Tohru Okamoto
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Abstract

Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $\tau_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $\tau_t$ obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.

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Tasuku Chiba, Ryuichi Masutomi, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto. 2013-07-11. In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system. https://doi.org/10.1103/physrevb.86.045310

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