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arXiv · 1307.6787

Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals

G B Sushko·A V Korol·Walter Greiner·A V Solov'yov
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Abstract

Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195--855 MeV.

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G B Sushko, A V Korol, Walter Greiner, A V Solov'yov. 2013-07-25. Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals. https://doi.org/10.1088/1742-6596/438/1/012018

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