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arXiv · 1308.0456

Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field

A. Satrapinski·S. Novikov·N. Lebedeva
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Abstract

Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator resistance bridge with high biasing current Isd = 40 micro ampere. The results showed that at B = 8 T the relative deviation of Hall resistance from the expected quantized value h/2e2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.

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A. Satrapinski, S. Novikov, N. Lebedeva. 2013-08-02. Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field. https://doi.org/10.1063/1.4826641

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