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arXiv · 1308.3017

Ultra-compact modulators based on novel CMOS-compatible plasmonic materials

Viktoriia E. Babicheva·Nathaniel Kinsey·Gururaj V. Naik·Andrei V. Lavrinenko·Vladimir M. Shalaev·Alexandra Boltasseva
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Abstract

We propose several planar layouts of ultra-compact plasmonic waveguide modulators that utilize alternative CMOS-compatible materials. The modulation is efficiently achieved by tuning the carrier concentration in a transparent conducting oxide layer, thereby tuning the waveguide either in plasmonic resonance or off-resonance. Resonance significantly increases the absorption coefficient of the plasmonic waveguide, which enables larger modulation depth. We show that an extinction ratio of 86 dB/um can be achieved, allowing for a 3-dB modulation depth in less than one micron at the telecommunication wavelength. Our multilayer structures can potentially be integrated with existing plasmonic and photonic waveguides as well as novel semiconductor-based hybrid photonic/electronic circuits.

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Viktoriia E. Babicheva, Nathaniel Kinsey, Gururaj V. Naik, Andrei V. Lavrinenko, Vladimir M. Shalaev, Alexandra Boltasseva. 2013-08-14. Ultra-compact modulators based on novel CMOS-compatible plasmonic materials. https://doi.org/10.1364/oe.21.027326

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