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arXiv · 1308.3698

Impact of Short-Range Scattering on the Metallic Transport of Strongly Correlated 2D Holes in GaAs Quantum Wells

Nicholas J. Goble·John D. Watson·Michael J. Manfra·Xuan P. A. Gao
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Abstract

Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator-transitions. We have studied the transport of high mobility 2D holes in 20nm wide GaAs quantum wells (QWs) with varying short-range disorder strength by changing the Al fraction x in the Al_xGa_{1-x}As barrier. Via varying the short range interface roughness and alloy scattering, it is observed that increasing x suppresses both the strength and characteristic temperature scale of the 2D metallicity, pointing to the distinct role of short-range versus long-range disorder in the 2D metallic transport in this correlated 2D hole system with interaction parameter r_s~ 20.

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Nicholas J. Goble, John D. Watson, Michael J. Manfra, Xuan P. A. Gao. 2013-08-16. Impact of Short-Range Scattering on the Metallic Transport of Strongly Correlated 2D Holes in GaAs Quantum Wells. https://doi.org/10.1103/physrevb.90.035310

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