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arXiv · 1308.5908

Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots

Lei Zhang·Chu-Hsiang Teng·Tyler A. Hill·Leung-Kway Lee·Pei-Cheng Ku·Hui Deng
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Abstract

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%-25% exhibited single photon emission at 10 K.

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Lei Zhang, Chu-Hsiang Teng, Tyler A. Hill, Leung-Kway Lee, Pei-Cheng Ku, Hui Deng. 2013-08-27. Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots. https://doi.org/10.1063/1.4830000

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