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arXiv · 1309.4626

Gate depletion of an InSb two-dimensional electron gas

M. M. Uddin·H. W. Liu·K. F. Yang·K. Nagase·K. Sekine·C. K. Gaspe·T. D. Mishima·M. B. Santos·Y. Hirayama
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Abstract

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).

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M. M. Uddin, H. W. Liu, K. F. Yang, K. Nagase, K. Sekine, C. K. Gaspe, T. D. Mishima, M. B. Santos, Y. Hirayama. 2013-09-18. Gate depletion of an InSb two-dimensional electron gas. https://doi.org/10.1063/1.4821106

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