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arXiv · 1310.0439

Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects

Bablu Mukherjee·Eng Soon Tok·Chorng Haur Sow
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Abstract

Single crystal GeSe2 nanobelts (NBs) were successfully grown using chemical vapor deposition techniques. The morphology and structure of the nanostructures were characterized using scanning electron microscopy, transmission electron microscopy, X-ray diffractometry, and Raman spectroscopy. Electronic transport properties, photoconductive characteristics, and temperature-dependent electronic characteristics were examined on devices made of individual GeSe2 nanobelt. Localized photoconductivity study shows that the large photoresponse of the device primarily occurs at the metal-NB contact regions. In addition, the electrically Schottky nature of nanobelt-Au contact and p-type conductivity nature of GeSe2 nanobelt are extracted from the current-voltage characteristics and spatially resolved photocurrent measurements. The high sensitivity and quick photoresponse in the visible wavelength range indicate potential applications of individual GeSe2 nanobelt devices in realizing optoelectronic switches.

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Bablu Mukherjee, Eng Soon Tok, Chorng Haur Sow. 2013-10-01. Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects. https://doi.org/10.1063/1.4823779

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