Photo-induced doping and strain in exfoliated graphene

E. Alexeev; J. Moger; E. Hendry

doi:10.1063/1.4823552

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arXiv · 1310.0970

Photo-induced doping and strain in exfoliated graphene

E. Alexeev·J. Moger·E. Hendry

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Abstract

The modification of single layer graphene due to intense, picoseconds near-infrared laser pulses is investigated. We monitor the stable changes introduced to graphene upon photoexcitation using Raman spectroscopy. We find that photoexcitation leads to both a local increase in hole doping and a reduction in compressive strain. Possible explanations for these effects, due to photo-induced oxygenation and photo-induced buckling of the graphene, are discussed.

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E. Alexeev, J. Moger, E. Hendry. 2013-10-03. Photo-induced doping and strain in exfoliated graphene. https://doi.org/10.1063/1.4823552

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