Physical Origin of Nonlinear transport in organic semiconductor at high carrier densities

Ling Li; Nianduan Lu; Ming Liu

doi:10.1063/1.4897916

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arXiv · 1310.2712

Physical Origin of Nonlinear transport in organic semiconductor at high carrier densities

Ling Li·Nianduan Lu·Ming Liu

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Abstract

The charge transport in some organic semiconductors demonstrates nonlinear properties and further universal power-law scaling with both bias and temperature. The physical origin of this behavior is investigated here using variable range hopping theory. The results shows, this universal power-law scaling can be well explained by variable range hopping theory . Relation to the recent experimental data is also discussed.

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Ling Li, Nianduan Lu, Ming Liu. 2013-10-10. Physical Origin of Nonlinear transport in organic semiconductor at high carrier densities. https://doi.org/10.1063/1.4897916

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