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arXiv · 1310.5021

Epitaxial Growth of VO$_{2}$ by Periodic Annealing

J. W. Tashman·J. H. Lee·H. Paik·J. A. Moyer·R. Misra·J. A. Mundy·T. Spila·T. A. Merz·J. Schubert·D. A. Muller·P. Schiffer·D. G. Schlom
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Abstract

We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

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J. W. Tashman, J. H. Lee, H. Paik, J. A. Moyer, R. Misra, J. A. Mundy, T. Spila, T. A. Merz, J. Schubert, D. A. Muller, P. Schiffer, D. G. Schlom. 2014-01-27. Epitaxial Growth of VO$_{2}$ by Periodic Annealing. https://doi.org/10.1063/1.4864404

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