Planar graphene tunnel field-effect transistor

V. L. Katkov; V. A. Osipov

doi:10.1063/1.4863820

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arXiv · 1310.6951

Planar graphene tunnel field-effect transistor

V. L. Katkov·V. A. Osipov

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Abstract

We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.

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V. L. Katkov, V. A. Osipov. 2014-02-06. Planar graphene tunnel field-effect transistor. https://doi.org/10.1063/1.4863820

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