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arXiv · 1310.7451

Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite

T. R. Arslanov·A. Yu. Mollaev·I. K. Kamilov·R. K. Arslanov·L. Kilanski·V. M. Trukhan·T. Chatterji·S. F. Marenkin·I. V. Fedorchenko
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Abstract

The effect of hydrostatic pressure on resistivity and magnetic ac susceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT) ferromagnetic chalcopyrite with two types of MnAs micro-clusters. The slight increase of temperature by about 30 K in the region between RT and Curie temperature TC causes a significant change in the positions of pressure-induced semiconductor-metal transition and magnetic phase transitions in low pressure area. By conducting measurements of the anomalous Hall resistance in the field H \leq 5 kOe, we present experimental evidence for pressure-induced metamagnetic-like state during the paramagnetic phase at pressure P = 5 GPa.

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T. R. Arslanov, A. Yu. Mollaev, I. K. Kamilov, R. K. Arslanov, L. Kilanski, V. M. Trukhan, T. Chatterji, S. F. Marenkin, I. V. Fedorchenko. 2013-10-28. Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite. https://doi.org/10.1063/1.4829746

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