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arXiv · 1310.8235

Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction

Murat Cubukcu·Olivier Boulle·Marc Drouard·Kevin Garello·Can Onur Avci·Ioan Mihai Miron·Juergen Langer·Berthold Ocker·Pietro Gambardella·Gilles Gaudin
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Abstract

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density $5\times10^{11}$ A/m$^2$ in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.

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Murat Cubukcu, Olivier Boulle, Marc Drouard, Kevin Garello, Can Onur Avci, Ioan Mihai Miron, Juergen Langer, Berthold Ocker, Pietro Gambardella, Gilles Gaudin. 2013-12-23. Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction. https://doi.org/10.1063/1.4863407

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