arXiv · 1311.0334
Temperature dependent nucleation and propagation of domain walls in a sub-100 nm perpendicularly magnetized Co/Ni multilayer
Abstract
We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked by a single sharp step change in resistance, low temperature measurements can reveal a series of resistance steps, consistent with non-uniform magnetization configurations. We propose a model that consists of domain nucleation, propagation and annihilation to explain the temperature dependence of the switching fields. Interestingly, low temperature (<30 K) step changes in resistance that we associate with domain nucleation, have a bimodal switching field and resistance step distribution, attributable to two competing nucleation pathways.
Explore related subjects
Keep this discovery
D. B. Gopman, D. Bedau, S. Mangin, E. E. Fullerton, J. A. Katine, A. D. Kent. 2013-11-02. Temperature dependent nucleation and propagation of domain walls in a sub-100 nm perpendicularly magnetized Co/Ni multilayer. https://doi.org/10.1063/1.4868159
Cite the original work for its findings. Save a collection to share your selection of sources.