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arXiv · 1311.1304

The synthesis and characterization of 1111-type diluted magnetic semiconductors (La1-xSrx)(Zn1-xTMx)AsO (TM = Mn, Fe, Co)

Jicai Lu·Huiyuan Man·Cui Ding·Quan Wang·Biqiong Yu·Shengli Guo·Hangdong Wang·Bin Chen·Wei Han·Changqing Jin·Yasutomo J. Uemura·F. L. Ning
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Abstract

The doping effect of Sr and transition metals Mn, Fe, Co into the direct-gap semiconductor LaZnAsO has been investigated. Our results indicate that the single phase ZrCuSiAs-type tetragonal crystal structure is preserved in (La1-xSrx)(Zn1-xTMx)AsO (TM = Mn, Fe, Co) with the doping level up to x = 0.1. While the system remains semiconducting, doping with Sr and Mn results in ferromagnetic order with TC ~ 30K, and doping with Sr and Fe results in a spin glass like state below ~6K with a saturation moment of ~0.02 muB/Fe, an order of magnitude smaller than the ~0.4 muB/Mn of Sr and Mn doped samples. The same type of magnetic state is observed neither for (Zn,Fe) substitution without carrier doping, nor for Sr and Co doped specimens.

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Jicai Lu, Huiyuan Man, Cui Ding, Quan Wang, Biqiong Yu, Shengli Guo, Hangdong Wang, Bin Chen, Wei Han, Changqing Jin, Yasutomo J. Uemura, F. L. Ning. 2013-11-06. The synthesis and characterization of 1111-type diluted magnetic semiconductors (La1-xSrx)(Zn1-xTMx)AsO (TM = Mn, Fe, Co). https://doi.org/10.1209/0295-5075/103/67011

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