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arXiv · 1311.3410

Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions

Y. Saeed·N. Singh·N. Useinov·U. Schwingenschlögl
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Abstract

The objective of this work is to describe the tunnel electron current in single barrier magnetic tunnel junctions within a new approach that goes beyond the single-band transport model. We propose a ballistic multi-channel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single crystal magnetic Fe(110) electrodes for Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ tunnel junctions, where the electronic band structures of Fe and La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ are derived by \it{ab-initio} calculations.

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Y. Saeed, N. Singh, N. Useinov, U. Schwingenschlögl. 2013-11-14. Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions. https://doi.org/10.1103/physrevb.88.060405

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