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arXiv · 1312.0773

Influence of free carriers on exciton ground states in quantum wells

A. A. Klochikhin·V. P. Kochereshko·S. Tatarenko
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Abstract

The influence of free carriers on the ground state of the exciton at zero magnetic field in a quasi-two-dimensional quantum well doped with electrons is considered in the framework of the random phase approximation. The effects of the exciton-charge-density interaction and the inelastic scattering processes due to the Hartree-Fock electron-electron exchange interaction are taken into account. The effect of phase-space filling is considered using an approximate approach. The results of the calculation are compared with the experimental data available.

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A. A. Klochikhin, V. P. Kochereshko, S. Tatarenko. 2013-12-03. Influence of free carriers on exciton ground states in quantum wells. https://doi.org/10.1016/j.jlumin.2014.04.039

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