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arXiv · 1312.3227

Noise Studies of Driven Geometric Phase Gates with Trapped Ions

A. Lemmer·A. Bermudez·M. B. Plenio
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Abstract

We present a study of the performance of the trapped-ion driven geometric phase gates introduced in [New J. Phys. 15, 083001 (2013)] when realized in a stimulated Raman transition. We show that the gate can achieve errors below the fault-tolerance threshold in the presence of laser intensity fluctuations. We also find that, in order to reduce the errors due to photon scattering below the fault-tolerance threshold, very intense laser beams are required to allow for large detunings in the Raman configuration without compromising the gate speed.

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A. Lemmer, A. Bermudez, M. B. Plenio. 2013-12-11. Noise Studies of Driven Geometric Phase Gates with Trapped Ions. https://arxiv.org/abs/1312.3227

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