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arXiv · 1312.3719

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Y. Z. Chen·N. Bovet·T. Kasama·W. W. Gao·S. Yazdi·C. Ma·N. Pryds·S. Linderoth
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Abstract

Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface.

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Y. Z. Chen, N. Bovet, T. Kasama, W. W. Gao, S. Yazdi, C. Ma, N. Pryds, S. Linderoth. 2013-12-13. Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces. https://doi.org/10.1002/adma.201304634

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