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arXiv · 1312.4694

High-temperature thermoelectric properties of novel layered bismuth-sulfide LaO1-xFxBiS2

Atsushi Omachi·Joe Kajitani·Takafumi Hiroi·Osuke Miura·Yoshikazu Mizuguchi
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Abstract

We have investigated the high-temperature thermoelectric properties of the layered compound LaO1-xFxBiS2. The electrical resistivity of LaOBiS2 showed an anomalous behavior; a metal-semiconductor transition was observed around 270 K. It was found that the value of the electrical resistivity decreased with F substitution. The Seebeck coefficient decreased with increasing F concentration. The highest power factor of 1.9 W/cmK2 at 480 C was obtained for LaOBiS2.

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Atsushi Omachi, Joe Kajitani, Takafumi Hiroi, Osuke Miura, Yoshikazu Mizuguchi. 2013-12-17. High-temperature thermoelectric properties of novel layered bismuth-sulfide LaO1-xFxBiS2. https://doi.org/10.1063/1.4867186

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