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arXiv · 1312.7720

Mid-infrared Active Graphene Nanoribbon Plasmonic Waveguide Devices

Kelvin J. A. Ooi·Hong Son Chu·Lay Kee Ang·Ping Bai
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Abstract

Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP) wavelength. In this paper, we design active plasmonic waveguide devices based on electrical-modulation of doped graphene nanoribbons (GNRs) on a voltage-gated inhomogeneous dielectric layer. We first develop figure-of-merit (FoM) formulae to characterize the performance of passive and active graphene nanoribbon waveguides. Based on the FoMs, we choose optimal GNRs to build a plasmonic shutter, which consists of a GNR placed on top of an inhomogeneous SiO$_2$ substrate supported by a Si nanopillar. Simulation studies show that for a simple 50nm-long plasmonic shutter, the modulation contrast can exceed 30dB. The plasmonic shutter is further extended to build a 4-port active power splitter and an 8-port active network, both based on GNR cross-junction waveguides. For the active power splitter, the GSP power transmission at each waveguide arm can be independently controlled by an applied gate-voltage with high modulation contrast and nearly-equal power-splitting proportions. From the construct of the 8-port active network, we see that it is possible to scale up the GNR cross-junction waveguides into large and complex active waveguide networks, showing great potential in an exciting new area of mid-infrared graphene plasmonic integrated nanocircuits.

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Kelvin J. A. Ooi, Hong Son Chu, Lay Kee Ang, Ping Bai. 2013-12-30. Mid-infrared Active Graphene Nanoribbon Plasmonic Waveguide Devices. https://doi.org/10.1364/josab.30.003111

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