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arXiv · 1401.1237

Discrete Charging in Polysilicon Gates of Single Electron Transistors

Dharmraj Kotekar-Patil·Stefan Jauerneck·David Wharam·Dieter Kern·Xavier Jehl·Romain Wacquez·M. Sanquer
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Abstract

Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates.

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Dharmraj Kotekar-Patil, Stefan Jauerneck, David Wharam, Dieter Kern, Xavier Jehl, Romain Wacquez, M. Sanquer. 2014-01-06. Discrete Charging in Polysilicon Gates of Single Electron Transistors. https://arxiv.org/abs/1401.1237

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