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arXiv · 1401.2616

Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Ryo Nouchi·Masanori Shigeno·Nao Yamada·Tomoaki Nishino·Katsumi Tanigaki·Masahiko Yamaguchi
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Abstract

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited to being static. We show that a dynamic nature can be imparted to the interfaces using electrode surface modification with a structurally disordered molecular monolayer. The barrier height at the interfaces is altered significantly in a reversible way by an external electric field. As a result, a dramatic change in the carrier transport properties through the interfaces is observed, such as a reversible polarity reversion of metal/organic-semiconductor/metal diodes.

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Ryo Nouchi, Masanori Shigeno, Nao Yamada, Tomoaki Nishino, Katsumi Tanigaki, Masahiko Yamaguchi. 2014-01-12. Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers. https://doi.org/10.1063/1.4861164

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