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arXiv · 1401.6885

Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures

C. C. Lo·S. Simmons·R. Lo Nardo·C. D. Weis·A. M. Tyryshkin·J. Meijer·D. Rogalla·S. A. Lyon·J. Bokor·T. Schenkel·J. J. L. Morton
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Abstract

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$μ$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $η_a=-1.9\pm0.2\times10^{-3} μ$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.

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C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, J. J. L. Morton. 2014-01-27. Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures. https://doi.org/10.1063/1.4876175

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