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arXiv · 1402.5356

Energy-efficient magnetoelastic non-volatile memory

Ayan K. Biswas·Supriyo Bandyopadhyay·Jayasimha Atulasimha
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Abstract

We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [Tiercelin, et al., J. Appl. Phys., 109, 07D726 (2011)], our scheme improves distinguishability between the stored bits when the latter are read with magneto-tunneling junctions. More importantly, the write energy dissipation and write error rate are reduced significantly if the writing speed is kept the same. Such a scheme could be one of the most energy-efficient approaches to writing bits in magnetic non-volatile memory.

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Ayan K. Biswas, Supriyo Bandyopadhyay, Jayasimha Atulasimha. 2014-02-21. Energy-efficient magnetoelastic non-volatile memory. https://doi.org/10.1063/1.4882276

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