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arXiv · 1402.6569

Size confinement effect in graphene grown on 6H-SiC (0001) substrate

V. M. Mikoushkin·V. V. Shnitov·A. A. Lebedev·S . P. Lebedev·S. Yu. Nikonov·O. Yu. Vilkov·T. Iakimov·R. Yakimova
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Abstract

We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0001). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E1 = 0.3 eV, E2 = 1.2 eV, E3 = 2.6 eV ) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 A) quantum well formed by potential relief of the valence bands in the structure graphene/n-SiC. We believe that the quantum well states should be formed also in graphene on dielectric and in suspended graphene.

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V. M. Mikoushkin, V. V. Shnitov, A. A. Lebedev, S . P. Lebedev, S. Yu. Nikonov, O. Yu. Vilkov, T. Iakimov, R. Yakimova. 2014-02-26. Size confinement effect in graphene grown on 6H-SiC (0001) substrate. https://arxiv.org/abs/1402.6569

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