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arXiv · 1403.3927

Hysteresis in the Conductance of Asymmetrically Biased GaAs Quantum Point Contacts with in-plane Side Gates

N. Bhandari·M. Dutta·J. Charles·M. Cahay·R. S. Newrock
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Abstract

We have observed hysteresis between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of an asymmetrically biased GaAs quantum point contact. The size of the hysteresis loop increases with the amount of bias asymmetry between the two side gates and depends on the polarity of the bias asymmetry. It is argued that hysteresis may constitute another indirect proof of spontaneous spin polarization in the narrow portion of the quantum point contact.

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N. Bhandari, M. Dutta, J. Charles, M. Cahay, R. S. Newrock. 2014-03-16. Hysteresis in the Conductance of Asymmetrically Biased GaAs Quantum Point Contacts with in-plane Side Gates. https://doi.org/10.1063/1.4813506

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