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arXiv · 1405.1093

Hall field-induced resistance oscillations in Ge/SiGe quantum wells

Q. Shi·M. A. Zudov·O. A. Mironov·D. R. Leadley
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Abstract

We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass $m^\star \approx 0.09\,m_0$, obtained from microwave photoresistance in the same sample.

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Q. Shi, M. A. Zudov, O. A. Mironov, D. R. Leadley. 2014-05-05. Hall field-induced resistance oscillations in Ge/SiGe quantum wells. https://doi.org/10.1103/physrevb.90.161301

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