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arXiv · 1405.5679

Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

C. J. Chua·M. R. Connolly·A. Lartsev·T. Yager·S. Lara-Avila·S. Kubatkin·S. Kopylov·V. I. Fal'ko·R. Yakimova·R. Pearce·T. J. B. M. Janssen·A. Ya. Tzalenchuk·C. G. Smith
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Abstract

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

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C. J. Chua, M. R. Connolly, A. Lartsev, T. Yager, S. Lara-Avila, S. Kubatkin, S. Kopylov, V. I. Fal'ko, R. Yakimova, R. Pearce, T. J. B. M. Janssen, A. Ya. Tzalenchuk, C. G. Smith. 2014-10-27. Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene. https://doi.org/10.1021/nl5008757

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