Complementary memristive device based on a thin film of MoS2 monolayers

Antonio Radoi; Mircea Dragoman; Daniela Dragoman; Mihaela Kusko

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arXiv · 1405.6406

Complementary memristive device based on a thin film of MoS2 monolayers

Antonio Radoi·Mircea Dragoman·Daniela Dragoman·Mihaela Kusko

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Abstract

In this manuscript we demonstrate experimentally that a thin film of MoS2 monolayers formed by drop-casting on a gold interdigitated electrode on Si/SiO2 behaves like a complementary memristive device, which is a key device of future crossbar memories. The hysteretic behavior of this device is modulated by light in a spectral range expanding from UV up to IR. In contrast to previous complementary memristive devices based on complicated oxides heterostructures, this device has a simple fabrication procedure and can be controlled by light, in addition to electrical signals.

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Antonio Radoi, Mircea Dragoman, Daniela Dragoman, Mihaela Kusko. 2014-05-25. Complementary memristive device based on a thin film of MoS2 monolayers. https://arxiv.org/abs/1405.6406

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