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arXiv · 1406.2072

Exciton-plasmaritons in graphene-semiconductor structures

Kirill A. Velizhanin·Tigran. V. Shahbazyan
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Abstract

We study strong coupling between plasmons in monolayer charge-doped graphene and excitons in a narrow gap semiconductor quantum well separated from graphene by a potential barrier. We show that the Coulomb interaction between excitons and plasmons result in mixed states described by a Hamiltonian similar to that for exciton-polaritons and derive the exciton-plasmon coupling constant that depends on system parameters. We calculate numerically the Rabi splitting of exciton- plasmariton dispersion branches for several semiconductor materials and find that it can reach values of up to 50 - 100 meV.

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Kirill A. Velizhanin, Tigran. V. Shahbazyan. 2014-06-09. Exciton-plasmaritons in graphene-semiconductor structures. https://doi.org/10.1103/physrevb.90.085403

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