Semi-shunt field emission in electronic devices

Victor Karpov; Diana Shvydka

doi:10.1063/1.4892547

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arXiv · 1406.3874

Semi-shunt field emission in electronic devices

Victor Karpov·Diana Shvydka

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Abstract

We introduce a concept of semi-shunts representing needle shaped metallic protrusions shorter than the distance between a device electrodes. Due to the lightening rod type of field enhancement, they induce strong electron emission. We consider the corresponding signature effects in photovoltaic applications; they are: low open circuit voltages and exponentially strong random device leakiness. Comparing the proposed theory with our data for CdTe based solar cells, we conclude that stress can stimulate semi-shunts' growth making them shunting failure precursors. In the meantime, controllable semi-shunts can play a positive role mitigating the back field effects in photovoltaics.

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Victor Karpov, Diana Shvydka. 2014-06-16. Semi-shunt field emission in electronic devices. https://doi.org/10.1063/1.4892547

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